The University of Arizona
azengineering

Spectral-Shifting and Holographic Planar Concentrators for use with Photovoltaic Solar Cells

 

Raymond K. Kostuk, Jose Castillo, Juan Manuel Russo, "Spectral-Shifting and Holographic Planar Concentrators for use with Photovoltaic Solar Cells", SPIE Optics and Photonics 2010.

A comparison of two types of solar concentrators for use with standard silicon photovoltaic cellsis provided. The first is spectral shifting luminescent concentrator that absorbs light in onespectral band and re-emits light at longer wavelengths where the absorption of standard silicon photovoltaic cells is more efficient. The second type is a holographic planar concentrator that selects the most useful bands of the solar spectrum and concentrates them onto the surface of photovoltaic cell. Both types of concentrators take advantage of total internal reflected light, do not require tracking, and can operate with both direct and diffuse sunlight. The holographic planar concentrator provides a simpler and more cost effective solution with existing materials and construction methods.

A Simple Non-Linear Model for the Effect of Partial Shade on PV Systems

 

Niket Thakkar, Daniel Cormode, Vincent P.A. Lonij, Steve Pulver, Alexander D. Cronin, "A Simple Non-Linear Model for the Effect of Partial Shade on PV Systems", Photovoltaics Conference 2010.

The effect of shade from one PV module on another is incorporated into a model for the power generated by PV systems. The model is calibrated with data from the Tucson Electric Power solar test yard. Shade de-rating factors from the model are compared with data every minute of the day and every day of the year. The model is then used to predict final yields (kWh/kWDC) for different PV system deployments with various (non-tracking) module orientations and ground-cover ratios. Several heuristics are put forth to help understand how the observed non-linear response to shade can impact the yield from PV systems. In one example, we find that a PV system deployed in the Tucson Electric Power solar test yard could produce 22% more kWh for the month of December (and 3.8% more annually) if the modules were separated by twice as much distance. In another example, we predict that a system in Tucson with south-facing modules at 12-degrees from horizontal can generate 1.5 times as many kWh/yr per square-meter of land compared to a system with modules at 32-degrees (the latitude angle). These examples emphasize the non-linear impact of partial shade on PV system performance.

 

RF-sputtered Ge:ITO nanocomposite thin films for photovoltaic applications

G. Shih*, C.G. Allen, and B.G. Potter, Jr., "RF-sputtered Ge:ITO nanocomposite thin films for photovoltaic applications." Solar Energy Materials and Solar Cells 94, 797 (2010).

Nanocomposite thin films, composed of a germanium nanocrystalline phase embedded within a tin-doped indium oxide (ITO) matrix, were produced using a multisource, sequential, RF-magnetron sputter deposition technique. The influence of nanocomposite structure on the resulting optical absorption and carrier transport properties was investigated in the context of the use of such materials as functional elements in thin film photovoltaic architectures. Deposition controls and post-deposition thermal anneals were successful in modifying the phase assembly of the nanocomposites, enabling the manipulation of Ge volume fraction, nanocrystallite size and morphology, and spatial distribution within the ITO embedding phase. Modifications in semiconductor nanostructure were correlated with changes in nanocomposite spectral absorption that were consistent with quantum-size-induced variation in Ge absorption onset energy, despite the close agreement in electron affinity between the Ge and ITO components. This suggests the formation of a high band-gap (low electron affinity) interfacial phase between the Ge and ITO components of the nanocomposite. Increased free-carrier (n-type) densities and spectrally resolved photoconductivity were also associated with the presence of the Ge phase. These results emphasize the impact of local and extended length scale structure on properties of importance to photovoltaic performance in semiconductor-based nanocomposites and the utility of the sequential sputter deposition method as a means to manipulate nanocomposite structure.

 

 

 

Potential-Modulated Attenuated Total Reflectance Characterization of Charge Injection Processes in Monolayer-Tethered CdSe Nanocrystals

 
Zeynep Oxkan Araci, Clayton R. Shallcross, Neal R. Armstrong, S. Scott Saavedra, "Potential-Modulated Attenuated Total Reflectance Characterization of Charge Injection Processes in Monolayer-Tethered CdSe Nanocrystals", Ceramic Society 2010.

Reversible electron injection into pyridine-capped CdSe nanocrystals (pry-CdSe NCs), tethered to indium-tin oxide (ITO) substrates using mercaptoalkylcarboxylic acids, is characterized using attenuated total reflectance (ATR) spectroelectrochemistry on a planar waveguide.  The sensitivity of this technique provides for characterization of redox processes in submonolayer films of pyr-CdSe NCs.  Optically determined onset potentials for electron injection, measured as bleaching/recovery of the exciton absorption band, provide estimates for the conduction band edge (ECB).  Potential-modulated attenuated total reflectance (PM-ATR), in which the in-phase and out-of-phase reflectance response is measured as a function of modulation frequency, provides estimates for rates of electron injection.  These apparent rate constants are found to be nearly independent of tether chain length, suggesting that communication between tethered NCs and electrochemically less active (i.e., less conductive) regions on the ITO surface is rate-limiting.

Microstructual and optical characterization of germanium:indium-tin-oxide (Ge:ITO) nanocomposite films

 

C.G. Allen, G. Shih, and B.G. Potter, Jr., "Microstructual and optical characterization of germanium:indium-tin-oxide (Ge:ITO) nanocomposite films," Mat. Sci. Eng. B, Vol. 175, pp. 150-158, (2010) .

The nanophase assembly and resulting optical and electronic properties of Ge:ITO composite thin films, produced by a sequential RF-sputtering deposition approach, were manipulated via deposition conditions and subsequent isochronal thermal anneals. The study examined the combined influences of thermally induced changes in phase crystallinity, semiconductor-phase morphology, and Ge–ITO interfacial structure on properties of relevance to photovoltaic function. A range of Ge-phase spatial distributions within the ITO embedded phase were produced, including isolated Ge nanocrystals and two-dimensional extended semiconductor structures, as evaluated using cross-sectional transmission electron microscopy. The magnitude of a quantum-confinement induced blue-shift in the Ge absorption onset increased monotonically with increased isochronal anneal temperature and was concomitant to the decrease in connectivity of the as-deposited Ge-phase assembly. Raman spectroscopy, over the range of nanocomposite structures examined, confirmed the evolution of a germanium oxide interfacial structure anticipated to affect both carrier confinement within the Ge and long-range charge transport in the nanocomposite. Shifts in the near-infrared transmission edge with anneal temperature were further correlated, using Hall-effect measurements, with a thermally equilibrated free carrier population. An increased free carrier density in composite films, over that of similarly treated single-phase ITO, was attributed to the presence of the Ge semiconductor-phase. While a general reduction in carrier mobility accompanied the increased carrier density, resistivities of the composite films were found to be largely insensitive to the nanostructure morphology changes and, moreover, were comparable to that of single-phase ITO films produced under similar preparation conditions. Finally, optical excitation at energies resonant with the Ge absorption onset, but below the band-gap of the ITO, resulted in a photoconductive response attributed to photoelectron transfer from the Ge-phase to the ITO.